Rapid Thermal Processor
The system is capable of the following:
- Annealing of samples in a very clean environment (inside a quartz tube) in the temperature window of 200 C - 1100 C. Carrier gas can be O2, N2, or both
- Formation of thin and ultra thin oxides
- Formation of ultra shallow pn junctions for variety of applications
- Crystallization of amorphous thin films
User Fees:
- Training: $75
- User fee: $120/hour for trained users
- Minimum usage time: 30 min
Facility/Instrument Director:
Mahdi Farrokh Baroughi
Contact Information:
(605) 688-4526
m.farrokhbaroughi@sdstate.edu